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GaN
Gallium Nitride is a stable wide bandgap semiconductor material. AKA: Gallium Nitride
See Also: LED, Transistor
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Rad Hard GaN FETs
Wide band gap semiconductor technologies such as Gallim Nitride Field Effect Transistors (GaN FETs) have been gaining interest for power management and conversion in space applications. These devices feature higher breakdown voltage, lower RDS(ON) and very low gate charge enabling power management systems to operate at higher switching frequencies while still achieving higher efficiency and a smaller solution footprint. There is an additional benefit from GaN devices that make them attractive to the space market. These devices are inherently immune to total ionizing dose radiation.
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50 µs Pulse Medium Current Source/Measure Unit (MCSMU)
B1514A
The 50 s Pulse Medium Current SMU is an SMU designed for faster pulsed IV measurement. It enables a pulsed measurement down to 50 s pulse width, a 10 times or more narrow pulsed measurement than provided by a comparable conventional SMU. In addition, the instrument offers a wider range and versatility, up to 30 V / 1A, with voltage/current programmability. It is useful to characterize high to medium power devices on the new materials such as SiC and GaN, and organic devices, and the MCSMU expands your choices of pulsed IV measurement.
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ST/MT Family
MT System is a configurable test equipment suitable to verify static and dynamic parameters of power semiconductors (i.e. IGBT, MOSFET, DIODE, THYRISTOR, SiC, GaN, etc) packaged and unpackaged (discrete, module and substrate). ST System is a test equipment suitable to verify stability or drift of all static parameters of discrete power semiconductors.
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High Voltage Switching Test System
The advanced development of new technologies, such as SiC and GaN, have opened the opportunity for more efficient and higher voltage/power performance in switching and power management circuits. Their high cutoff frequencies, low on-state resistance, and very high breakdown voltages can increase power supply power handling densities approaching hundreds of watts/inch. Reliability of these new technologies and techniques is critical for realizing practical applications. While Silicon devices have a rich history of proven reliability, these newer compound semiconductor technologies are too new to have a reliability history and have not been well proven. Further, process variations, even in well-controlled lines, yield widely varying results. This has driven the need for additional testing and to burn-in devices prior to delivery.
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1 GHz 60 V Common Mode Differential Probe
DL10-HCM
60 V of common mode and 80 V differential input range with 1 GHz of bandwidth, make these probes ideal for lower voltage GaN power conversion measurements. The 60 V of common mode is well suited for handling any float of the battery and bulk/absorption voltage during charging, while the 80 V differential input range provide margin for any overshoot.
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Power Device Analyzer / Curve Tracer
B1505A
The Keysight B1505A Power Device Analyzer / Curve Tracer is the only single box solution available with the capability to characterize high power devices from the sub-picoamp level up to 10 kV and 1500 A. These capabilities allow evaluation of novel new device such as IGBT and materials such as GaN and SiC. The B1505A supports a variety of modules: high voltage SMU (HVSMU), high current SMU (HCSMU), ultra high current (UHC) module, ultra high voltage (UHV) module and high voltage medium current (HVMC) module. The B1505A also supports: high-power SMU (1 A/200 V), medium-power SMU (100 mA/100 V) ,medium-current SMU (1 A/30V pulsed, 100 mA/30V DC) and a multi-frequency capacitance measurement unit (1 kHz 5 MHz). Its ten-slot modular mainframe allows you to configure the B1505A to suit your measurement needs.
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Test & Measurement Instrument Amplifiers
MPA-series
The MPA-series Test & Measurement Instrument Amplifiers are based on state-of-the-art GaN PA modules and operate from 0.7 to 26.5 GHz (multiple frequency options are available). They provide High continuous power across the band, high linearity for wideband communications testing, have variable gain adjustment and a high-resolution display shows amplifier status. Amplifiers offer a wide range of application-specific requirements including simultaneous high-power, wide bandwidth, low harmonic power and high linearity.
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DL-ISO 2 Vpp MMCX Tip
DL-ISO-2V-TIP
- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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DL-HCM Series Accessories Kit with Probe Holder, Micro IC Grabbers (Qty. 2), and Y-Banana Adaptor
DL-HCM-Acc-Kit
60 V of common mode and 80 V differential input range with 1 GHz of bandwidth, make these probes ideal for lower voltage GaN power conversion measurements. The 60 V of common mode is well suited for handling any float of the battery and bulk/absorption voltage during charging, while the 80 V differential input range provide margin for any overshoot.
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Silicon & Compound Wafers
Compound semiconductors are undergoing a major expansion addressing many new applications and using various materials such as SiC, GaN, GaAs and others, to improve the performance of new devices in several segments such as Power and Face Recognition.
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MPI Sorter Series
MPI’s Sorter Series are improving production efficiency and yields for market sectors related to LED chip, package production, discrete device handling, and IC substrate manufacturing. Deploying MPI’s Pick & Place technology, the Sorter Line offers dedicated sorting and defect inspection solutions particularly suited for GaN, GaAs, Vertical LED Chip, Flip Chip, and Laser Diode applications. With a proven heritage of and market-advanced technologies, MPI offers competitive and differentiated solutions that are scalable and cost-effective.
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DL-ISO 1000 Vpp Square Pin Tip
DL-ISO-1000V-TIP
- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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High Density Plasma Etching System for 200mm substrates
Model DRIE-1200-LL-ICP
Single process chamber for high rate plasma etching of 200mm wafers. Loadlocked. Stainless steel construction. Capabilities of smaller, multiple wafer throughput. Substrate materials include (but are not limited to) silicon, silicon oxynitrides, SiC, SiGe, Aluminum, and III-V compounds including GaAs, GaN, GaP, and InP. Stable plasma generation capabilities to below 1 mTorr. Five, Six, or Eight gas mass flow controllers are standard. Expanded or reduced numbers are available upon request.
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Ultra Broadband SSPA
Exodus Advanced Communications
Exodus Chip & Wire Hybrid ultra broadband amplifiers feature GaN, GaAsFET discrete die on ceramic substrate covering frequency ranges from 4GHz to 26.5GHz and power levels exceeding 500W.
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Ruggedized SSPA 4 to 8 GHz, 40 W GAN Hybrid Module
AMP1110
Exodus Advanced Communications
Ruggedized Solid State Power Amplifier. Our Best in Class Power Amplifier AMP1110 a 4 to 8 GHz, 40 W Minimum Saturated Power output module. The AMP1110 is a Class AB linear GaN hybrid design with instantaneous bandwidth. Other features include 4.0dB Peak to Peak flatness and 12A Max Consumption. This AMP1110 has Built-in protection circuits, high reliability and ruggedness. It is suitable for any application such as EW, EMI/RFI Lab, and High Power testing.
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Solid State Power Amplifiers
Skylink SSPAs incorporate state-of-art DPD and well-done Heat Dissipation technologies with available LDMOS, GaN & GaAs Chips. Solutions of SSPA frequency range from 9kHz to 50GHz and output power up to kilowatts and includes basic PA modules to integrated chassis with embedded software for local and remote control and monitoring.
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RF Amplifiers up to 2500 MHz
L and S Band 1,2,4, and 8 Kilowatt rack mount solid state microwave amplifiers ideal for CW and pulse TWT amplifier replacement utilizing GaN technology and rivals the TWT amplifier in size and weight. Also available is our broad line of high power modules including 25, 50, and 100 watt pallets for integrating into your own power amplifier design.
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High Throughput Test Platform for Multi-Site & Index Parallel Applications
ETS-88
The ETS-88 is an optimal test platform for testing a wide variety of devices including: simple analog, high precision, high voltage, high current / power, automotive, video, audio, complex mixed-signal, as well as emerging power processes like SiC and GaN.
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Space Power Solutions
Teledyne e2v HiRel Electronics (HiRel) offers leading edge power solutions dedicated for high-reliability applications. The introduction of Galium Nitride (GaN) technology solutions enable high power density designs with four times less space requirements than traditional MOSFETs. The Teledyne HiRel Point-of-Load (POL) products combine multiple load capabilities, outstanding radiation performance with high levels of integration and easy to use features.
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Radio Frequency (RF) And Microwave Products
Enable your 5G, aerospace, defense, test and measurement or industrial RF wireless applications with our portfolio of RF and microwave devices. These include high reliability RF diodes, Gallium Nitride (GaN) and Gallium Arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) amplifiers, frequency translation and power transistor devices, switches, attenuators, varactors, filters and more.
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Microscope Photoluminescence Spectrometer
Flex One
Photoluminescence (PL) is the light emission from a material under the excitation by ultraviolet, visible or near infrared radiation. In semiconductor luminescent property measurements, the sample (e.g. GaN, ZnO, GaAs etc.) was usually excited by a laser (with a wavelength of 325 nm, 532 nm, 785 nm etc.), and its PL spectrum is measured to analyze the optical physical properties, such as the band gap width etc.. Photoluminescence is a high sensitivity, non-destructive analysis method, which can provide the information about the structure, composition and surrounding atomic arrangement of materials. Therefore, it is widely used in physics, materials science, chemistry and molecular biology and other related fields.
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DL-ISO 40 Vpp MMCX Tip
DL-ISO-40V-TIP
- Ideal for GaN and SiC devices- Highest system accuracy- Fastest rise time- High CMRR - 160 dB
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RF High Power Amplifier Modules
Analog Devices MMIC-based GaN and GaAs power amplifiers cover the low hundred MHz frequency range up through and including components in the Ka-band (29 GHz to 31 GHz). Our portfolio also includes GaN-based power amplifier modules with output power exceeding 8 kW. Designed for excellent linearity at high output power, our power amplifiers maintain good heat dissipation and high reliability at elevated temperatures for the wide variety of test, radar, and aerospace and defense applications that they are used in.
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Solid-State RF amplifier module for High Power Testing
Exodus Advanced Communications
Exodus introduces the AMP1071 - a Solid-State RF amplifier module covering the entire ultra-wide 2.0-20.0GHz frequency range instantaneously at 20W CW minimum. Using State of the Art GaN devices, the AMP1071 operates from a 32VDC source at less than 10A consumption. This module is suitable for use with all single channel modulation standards and applications requiring high power and ultra-wide band coverage. It has built-in protection circuits, high reliability and ruggedness. Typical applications include High Power Testing, EMI/RFI, EW and Communications and Jamming.
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GaN Amplifiers
SBP-3233831838-KFKF-E1-HR
Model SBP-3233831838-KFKF-E1-HR is a power amplifier with a typical small signal gain of 18 dB and a nominal Psat of +38 dBm across the frequency range of 32 to 38 GHz. The DC power requirement for the amplifier is +30 VDC/2 A. The mechanical configuration is an inline structure with K(F) connector as its input port and output port. Other port configurations, such as K connectors and WR-28 waveguides for either the input or output, are also available under different model numbers.
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Communications/Data Link Amplifiers
Amplifiers specific to the Communications systems include a wide range of Solid State Power Amplifiers (SSPAs) and Low Noise Amplifiers (LNAs) originally from Paradise Datacom and a range of organically developed products within TMS. Satcom SSPAs are considered a core competence of Paradise Datacom's product line who have invested heavily in converting it's complete amplifier offering from GaAs to GaN from C-Band all the way to Ka-Band.
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60 V Common Mode Differential Probes
The 60 V Common Mode Differential Probes are the ideal probes for lower voltage GaN power conversion measurement with the highest accuracy, best CMRR, and lowest noise.
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Narrow band & Linear SSPA
Exodus Advanced Communications
Exodus Narrowband CW and Linearized SSPA products feature LDMOS, GaN,GaAsFET discrete and Chip & Wire Hybrid technologies covering frequency ranges from 1MHz to 26.5GHz at power levels exceeding 1KW for Modules and 10KW for Systems
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Defect Inspection Systems
Candela® defect inspection systems detect and classify a wide range of critical defects on compound semiconductor substrates (GaN, GaAs, InP, sapphire, SiC, etc.) and hard disk drives, with high sensitivity at production throughputs.
