Langer EMV-Technik GmbH
Langer EMV-Technik GmbH is a medium-sized electro-technical company which is active in the field of electromagnetic compatibility-related
- +49 (0) 351 430093-0
- +49 (0) 351 430093-22
- mail@langer-emv.de
- Nöthnitzer Hang 31
Bannewitz, D-01728
Germany
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Near Field Probes 30 MHz - 6 GHz
XF Family
The XF family consists of 4 passive magnetic field probes and 3 passive E field probes designed for measuring magnetic and E-fields in ranges from 30 MHz to 6 GHz during the development phase. Due to their integrated impendance matching the probes are less sensitive in the lower frequency range than the RF type probes.
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Near-Field Probes 100 kHz up to 50 MHz
LF1 set
The LF1 near-field probe set consists of 4 shielded near-field probes used during the development process for emission measurement of longwave, medium wave, and shortwave frequencies on electronic devices. The probe heads of the LF1 set are designed for incremental detection of sources of electromagnetic interference on assemblies. First, the electromagnetic interference of the assembly is detected by the LF-R 400 probe from up to 10 cm. Then probes with higher resolution like the LF-B 3, LF-U 5 and LF-U 2.5 are used to more precisely detect any source of interference. The probe heads are designed for taking measurements at single pins and larger components. Near-field probes are small and handy. They have a current attenuating sheath and, therefore, are electrically shielded. They can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probes do not have an internal terminating resistance of 50 Ω.
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Near Field Probes 30 MHz up to 3 GHz
RF1 set
The RF1 near field probe set consists of 4 passive near field probes for making measurements in the development phase of E-field and magnetic field in the ranges of 30 MHz to 3 GHz on electronic assemblies. The probe heads of the RF1 set allow for measurements close to the electronic assemblies, e.g. on single IC pins, conducting paths, components and their connectors in order to localize interference sources. Field orientation and field distribution on an electronic assembly can be detected through a trained special use of the near field probe. The near field probes are small and handy. They have a sheath current attenuation and are electrically shielded. They can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. They do not have an internal terminating resistance.
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Near Field Probes
MFA Family
The micro probes allow detailed measurements of high-frequency magnetic fields in the layout, at the smallest SMD components(0603-0201) and at IC pins of printed circuit boards.
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Immunity Development System
Used for EMI suppression in printed circuit boards during the development phase. The developer can use the E1 set to quickly identify the causes of burst and ESD interference. This allows the developer to design suitable measures to solve the causes of the interference. It can also be used to test the effectiveness of the measures taken.
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IC Side Channel Analysis
These probes allow you to couple fast, transient magnetic field, E-field, and current pulses into ICs.
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MP field sources calibration set
The MP field source calibration set is used to measure electric or magnetic fields in a frequency range up to 3 GHz. RF fields or transient fields can be measured. The MP field source calibration set is used to check fields of the Langer EMV-Technik GmbH field sources, fields of TEM cells and IC striplines.
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H-Field Burst Detector
BD 11
The BD 11 is used to detect a burst or ESD current pulse on a cable, for example in a complex system. This makes it easier to investigate the causes of sporadic faults in the system. It is small and handy, its sensitivity is very high and continuously adjustable.
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Optical signal transmission
Digital
The fibre optic cable are used to transmit digital signals from the device under test under EFT/burst interference.
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Accessory EFT/Burst generators IEC 61000-4-4
The field sources and the burst transformer are used to harden the device under test. They are powered by an EFT/burst generator.
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Near Field Probes 30 MHz up to 3 GHz
RF2 set
The RF2 near field probe set consists of 4 passive near field probes for measurements in the development phase of the magnetic field in the range from 30 MHz to 3 GHz on electronic assemblies. The probe heads of the RF2 set allow the step by step localization of interference sources of the RF magnetic field on assemblies. From greater distances the electromagnetic interference can be detected by RF-R 400-1 and RF-R 50-1 probes. The RF-B 3-2 and RF-U 5-2 probes with their higher resolution can more precisely detect the interference sources. Field orientation and field distribution on an electronic assembly can be detected through a trained special use of the near field probe. The near field probes are small and handy. They have a sheath current attenuation and are electrically shielded. They can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. They do not have an internal terminating resistance.
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Near Field Probes 30 MHz up to 6 GHz
XF1 set
The XF1 set of near field probes consists of 4 passive near field probes and one passive E field probe for making measurements in the development phase of the magnetic and electric fields in ranges from 30 MHz to 6 GHz. Due to their integrated impendance matching, the probes are less sensitive in the lower frequency range than the RF type probes. The probe heads of the XF1 set allow for the step by step identification of interference sources of the magnetic field on an electronic assembly. At first, for example the XF-R 400-1 detects the fields which the assembly emits in total. Next, using higher resolution probes the interference sources can be more precisely detected. The E field probe is used for the detection of electric interfering fields near the assemblies. With trained use of the near field probes, field orientation and field distribution can be detected. The near field probes are small and handy. They have a sheath current attenuation and are electrically shielded. They can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. They have an internal terminating resistance.
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Micro probes 1 MHz up to 6 GHz
MFA 01 set
The micro probes are used to measure magnetic fields and they have a high resolution. They measure magnetic fields up to 6 GHz, e.g. at signal conductors (150µm), SMD components (0603-0201) or IC pins. The MFA micro probes are guided by hand. An amplifier stage is integrated into the probe head. The amplifier stage (9V, 100mA) is powered via the Bias tee BT 706. It has an impedance of 50 Ohm. The micro probes are connected via the Bias tee BT 706 to a spectrum analyzer or an oscilloscope. Langer EMV-Technik GmbH includes correction lines in the delivery. With the help of the correction lines the probe output voltage is converted either into the respective magnetic field or to the current which is running through the conductor.
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Optical Signal Transmission
Analog
Used for oscillographing analog signals under EFT/EDS/RF interference.
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Near Field Micro Probes ICR HH H Field
The measuring coil is horizontally located in the probe head. The near field micro probes are operated with a positioning system (Langer Scanner).
