TEK-VAC INDUSTRIES Inc.
TEK-VAC INDUSTRIES, Inc. offers forty years of high vacuum and ultra-high vacuum technology experience to our customers in the form of production and R&D semiconductor process equipment. We offer systems which range from simple manual operation to fully automated turnkey. Our expertise includes design of operating system modes in broad temperature and pressure ranges, which provide accurate and reliable reproducibility.
- (631) 436-5100
- (631) 436-5154
- 176 Expressway Dr. South
Brentwood, NY 11717
United States
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Mass Spectrometer Gas Inlet System
Model MSI-3000
The Tek-Vac MSI-3000 is a general purpose inlet system, utilized for introduction of precision gas quantities into a mass spectrometer for quantitative analysis.Combined with Tek-Vac's proprietary stainless steel passivation for nuclear applications, the MSI-3000 may be implemented in functions where handling and exposure to hydrogen isotopes is required.
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Metal-Organic Compound Chemical Vapor Deposition
Model MOCVD-500-A
For Experimental growth of quality epitaxial layers III-V, II-VI compounds. Multi-Layer structures. Directly heated silicon carbide coated, high purity graphite or PBN susceptor. Low mass thermocouple probe immersed into susceptor. Broad temperature and pressure application. Highest quality materials utilized throughout.
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Plasma CVD & Etching Systems
MODEL DRIE-1000
A High Quality Plasma Deposition & Etch System, Ideal for R&D and Small Scale Production. Modified designs with capabilities of 12" wafers. Substrate heating to 500 C. Top loading / Optional loadlock. Multifunctional plasma network. Diversified pumping configurations. Variable electrode spacing. Customized features and components for specific applications.
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High Density Plasma Etching System for 200mm substrates
Model DRIE-1200-LL-ICP
Single process chamber for high rate plasma etching of 200mm wafers. Loadlocked. Stainless steel construction. Capabilities of smaller, multiple wafer throughput. Substrate materials include (but are not limited to) silicon, silicon oxynitrides, SiC, SiGe, Aluminum, and III-V compounds including GaAs, GaN, GaP, and InP. Stable plasma generation capabilities to below 1 mTorr. Five, Six, or Eight gas mass flow controllers are standard. Expanded or reduced numbers are available upon request.
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A Highly Versatile R&D Bell Jar Thin Film Coating System.
MODEL VES-3000
TEK-VAC's VES-3000 coater station model offers a modular concept for thin film deposition. Common PVD techniques which can be employed in this compact unit include thermal and electron beam evaporation. A 2KVA SCR controlled filament evaporation power supply is provided. Optional ion deposition and magnetron sputtering devices can be incorporated in the system.
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Photoresist Curing System
MODEL PRC-2000
A Compact Vacuum Bake Module, Ideal for Processing up to 12" x 12" wafers.Digital temperature control with P.I.D and auto tune features for precision control. Adjustable vacuum chucking pressure. Timed thermal contact provides excellent reproducibility. Automatic and manual versions. Safety interlocked Various fixture plates are available for multiple substrate processing.
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Plasma CVD & Reactive Ion Etching System
MODEL DRIE-1100-LL-ECR
The Tek-Vac DRIE-1100-LL-ECR series systems are designed for both high-density plasma chemical vapor deposition and reactive ion etching of sub-micron integrated circuits, optical devices and RF microwave electron devices.
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Residual Gas Analyzer System
LRGAS-100, -200, -300
Complete with RGA sensor, software, & electronics, vacuum pumping system, and mobile cart.Variety of sampling fittings.Automatic pump down.100, 200, or 300 amu sensor.Standard model contains an 80 L/s turbo pumping system with stainless steel manifold.Small footprint.Plugs into a common 120 VAC power outlet.Full front panel control.
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Vacuum Test & Storage Chambers
Model R43 Altitude Test Chamber, Model S222-SE
Universal Application Low Pressure Testing and Processing Chambers
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Gloveboxes & Gas Purification System
MODEL 440
Provides an inert environment for handling of highly reactive materials.Hermetically sealed chambers prohibitive to moisture and oxygen influx.Vacuum load-lock transfer chamber to avoid contamination.Optional purifier and regeneration systems are available.Three models and many options to suit your requirements.
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Plasma Etcher / Asher
PA-3000-A ETCHER
Process chamber with plasma view window and full access hinged door. RF hot process shelves with opposing ground electrodes. Throttle valve. Capacitance manometer. Internal pumping system with option for Fomblin filled chemical series mechanical pump. Flow control electronics and cabinet. Up to four mass flow control assemblies can be incorporated into our system. RF matching network and 600 watt maximum power supply. Fully enclosed cabinet. Custom internal fixturing to accommodate specific substrate shapes and sizes. Plasma gas selection for optimal performance.
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Ultra-High Vacuum CVD Process System
Model UHV-CVD-5000
ur Ultra-High Vacuum CVD system is utilized for multi-wafer processing of doped and intrinsic high quality epitaxial films, including materials such as Silicon Germanium.End products include SiGe components (RF & microwave devices, amplifiers, switches, discrete HBTs, and low noise MMICs) utilized in wireless communications applications such as cellular phones, pagers, local area networks, telemetry and sensors.
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Liquid Phase Epitaxy Systems
MODEL LPE-3750 / 4750
The Tek-Vac LPE-3750 / 4750 Liquid-Phase Epitaxial Reactor utilizes a graphite slider boat technique to produce high quality semiconductors at high throughput rates. Automated Control provides uniform processing from run to run. An IBM PC, or compatible, uses Graphic Displays to develop process recipes and procedures. The LPE-3750 / 4750 can operate in a stand-alone mode.
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R&D Microwave PECVD System
Model PECVD-60-M
Retrofittable with RF-DC-Laser Ablation Modules. High Temperature Substrate Heating, 4" Diameter. High Power Magnetron Head, 600W Microprocessor Temperature Control. Standard Model equipped to handle four gas inputs, expandable. Adaptable for RF or DC Plasma. Top Loading, Compact Footprint. Broad Operating Pressure Range (10-4 to 760 torr).
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Chemical Vaper Deposition R&D System
MODEL CVD-300-M
High Temperature, 1080 C (24" Hot Zone: 126 Cubic In.) High Purity Quartz Tube with Water Cooled End Caps. Broad Pressure Range of Atmosphere to 10-3 Torr. Upgradable to High Vacuum. Computer Interfaceable. Small Footprint (26" x 48"), Portable with caster mounts.
